Download and enjoy these high-quality facesitting movies and have a lot of fun!1. Field of the Invention
The present invention relates to a chip and a manufacturing method for a chip.
2. Description of the Related Art
Among Si-based power semiconductor devices, SiC-based power semiconductor devices are expected to be widely used since they can be driven with a low ON voltage (about 1V). SiC-based power semiconductor devices are formed of a SiC semiconductor layer in which multiple trenches are formed in the surface, and a gate electrode that is formed so as to penetrate these trenches. The SiC-based power semiconductor device is further formed of an N+-type SiC semiconductor region, which is formed on the rear surface side of the SiC semiconductor layer and to which an ON voltage is applied, and a P+-type SiC semiconductor region, which is formed on the surface side of the SiC semiconductor layer and to which a ground voltage is applied. In the SiC-based power semiconductor device, a PN junction is formed on the boundary between the P+-type SiC semiconductor region and the N+-type SiC semiconductor region.
A SiC-based power semiconductor device described in Japanese Patent Application Laid-open No. 2011-105528 is known as a SiC-based power semiconductor device that can obtain a higher blocking voltage (that is, a higher withstand voltage) than that of a Si-based power semiconductor device that is formed of a Si semiconductor layer. This SiC-based power semiconductor device includes: a deep trench that is formed in the surface of a SiC semiconductor layer; a gate electrode that penetrates the deep trench and extends in the vertical direction; and a high-concentration region that is formed in the surface of the SiC semiconductor layer and is to which a ground voltage is applied. In this way, in a SiC-based power semiconductor device, the surface of the SiC semiconductor layer has an inverted PN junction in which a P+-type region is formed on the surface side and an N−-type region is formed on the rear surface side.
This SiC-based power semiconductor device is formed by the following method. A trench is formed in the surface of the SiC semiconductor layer. A polysilicon film is formed to fill up the trench. The polysilicon
Related links:
Comments